09.01_FLASH-MAIN区域读写和擦除

/**
 * @brief FLASH-MAIN区域读写和擦除
 * @details
 * 通过调用FLASH_Write()和FLASH_Erase()函数，实现了对Flash存储器的读写和擦除操作。
 * 向flash存储器写入256字节的数据，然后擦除flash存储器，最后再写入数据。
 * 数据为0~255，然后读取flash存储器，最后比较写入和读取的数据是否一致。
 */
#include "lks32mc09x_flash.h"
#include "lks32mc09x_sys.h"

uint32_t address = 0x8000;
uint8_t testdata[256];
uint8_t buffer[256];

volatile uint32_t write_flg = 0;
/**
 * @brief 主函数
 */
int main(void)
{
    SYS_SetPowerFailureDetection(SYS_PVDSEL_OFF);
    for (int i = 0; i < 256; i++)
    {
        testdata[i] = i;
    }

    // 主循环，防止程序退出
    while (1)
    {
        switch (write_flg)
        {
        case 0:
            break;
        case 1:
            write_flg = 0;
            FLASH_Write(address, testdata, 256); // 写入flash
            break;
        case 2:
            FLASH_Erase(address); // 擦除flash
            write_flg = 0;
            break;
        case 3:
            FLASH_Read(address, buffer, 256); // 读取flash
            write_flg = 0;
            break;
        default:
            break;
        }
    }
}

#define FLASH FLASH0
#define REG_WRITE(reg,mask) reg = (mask)
#define REG_WRITE_BIT(reg,mask,val) reg = ((reg) & ~(mask)) | (val)
#define SYS0 ((SYS_TypeDef *)(SYS_BASE))

/**
 * @brief 从指定地址读取数据
 *
 * @param adr 目标地址
 * @param buf 数据缓冲区指针
 * @param len 数据长度
 */
void FLASH_Read(uint32_t adr, uint8_t *data, uint32_t len)
{
    uint32_t i;
    for (i = 0; i < len; i++)
    {
        data[i] = REG8(adr + i);
    }
}
/**
 * @brief 向指定地址写入数据
 * @param adr 目标地址
 * @param data 数据缓冲区指针
 * @param len 数据长度
 * @note 触发掉电检测后，对flash的操作无效，掉电检测的配置参考SYS_SetPowerFailureDetection
 */
void FLASH_Write(uint32_t adr, uint8_t *data, uint32_t len)
{
    uint8_t *p   = data;
    uint32_t flg = __get_PRIMASK();
    __disable_irq();
    SYS_WR_PROTECT = 0x7a83;
    SYS_FLSP       = 0x8f35;
    FLASH->CFG |= BIT27 | BIT23;
    FLASH->ADDR = adr;
    len &= ~3; // 低两位值忽略
    for (; len > 0; len -= 4)
    {
        FLASH->WDATA = p[0] | (p[1] << 8) | (p[2] << 16) | (p[3] << 24);
        p += 4;
    }
    SYS_FLSP = 0;
    FLASH->CFG &= ~(BIT27 | BIT23);
    SYS_WR_PROTECT = 0;
    __set_PRIMASK(flg);
}
/**
 * @brief 掉电检测配置
 * @param SYS_PVDSEL_x 掉电检测配置值
 */
void SYS_SetPowerFailureDetection(uint32_t SYS_PVDSEL_x)
{
    REG_WRITE(SYS0->PROTECT, 0x7a83);
    REG_WRITE_BIT(SYS0->AFE_REG0, (BIT11 | BIT12 | BIT13 | BIT14), SYS_PVDSEL_x);
    REG_WRITE(SYS0->PROTECT, 0);
}
/**
 * @brief 擦除指定扇区
 *
 * @param adr 目标地址
 * @note 触发掉电检测后，对flash的操作无效，掉电检测的配置参考SYS_SetPowerFailureDetection
 */
void FLASH_Erase(uint32_t adr)
{
    uint32_t flg = __get_PRIMASK();
    __disable_irq();
    SYS_WR_PROTECT = 0x7a83;
    SYS_FLSE       = 0x8fca;
    FLASH->CFG |= BIT31;
    FLASH->CFG &= ~BIT15;
    FLASH->ADDR  = adr;
    FLASH->ERASE = 0x7654DCBA;
    SYS_FLSE     = 0;
    FLASH->CFG &= ~BIT31;
    __set_PRIMASK(flg);
}